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| MA2J114 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Rectifier Diodes | |||
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Rectifier Diodes
MA2J114
Silicon epitaxial planar type
For small power rectification
I Features
⢠Small S-mini type package, allowing high-density mounting
⢠High reverse voltage VR
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
Peak reverse voltage
Output current
VR
150
V
VRM
150
V
IO
200
mA
Repetitive peak forward
current
IFRM
600
mA
Non-repetitive peak forward
surge current*
Junction temperature
Storage temperature
Note) * : t = l s
IFSM
1
A
Tj
150
°C
Tstg
â55 to +150
°C
Unit : mm
K
A
2
1
0.4 ± 0.1
1.7 ± 0.1
2.5 ± 0.2
0.4 ± 0.1
1É¿Anode
2É¿Cathode
S-Mini Type Package (2-pin)
Marking Symbol: 1E
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Reverse current (DC)
IR
Forward voltage (DC)
VF
Terminal capacitance
Ct
Note) Rated input/output frequency: 3 MHz
Conditions
VR = 150 V
IF = 200 mA
VR = 0 V, f = 1 MHz
Min Typ Max Unit
200 nA
1.2
V
4.5
pF
1
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