 English |
|
|
|
|
|
|
|
| MA2J113 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Switching Diodes | |||
| |||
|
Switching Diodes
MA2J113
Silicon epitaxial planar type
For switching circuits
I Features
⢠Small S-mini type package, allowing high-density mounting
⢠Ensuring the average forward current capacity IF(AV) = 200 mA
⢠High breakdown voltage (VR = 80 V)
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
Peak reverse voltage
Forward current (DC)
Peak forward current
VR
80
V
VRM
80
V
IF
200
mA
IFM
600
mA
Non-repetitive peak forward
IFSM
1
A
surge current*
Junction temperature
Storage temperature
Tj
150
°C
Tstg
â55 to +150
°C
Noe) * : t = 1 s
Unit : mm
K
A
2
1
0.4 ± 0.1
1.7 ± 0.1
2.5 ± 0.2
0.4 ± 0.1
1 : Anode
2 : Cathode
S-Mini Type Package (2-pin)
Marking Symbol: 1D
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time*
IR1
VR = 15 V
IR2
VR = 75 V
IR3
VR = 75 V, Ta = 100°C
VF
IF = 200 mA
Ct
VR = 0 V, f = 1 MHz
trr
IF = 10 mA, VR = 6 V
Irr = 0.1 · IR, RL = 100 â¦
50
nA
500 nA
100 µA
1.1
V
4
pF
10
ns
Note) 1. Rated input/output frequency: 100 MHz
2. * : trr measuring circuit
Bias Application Unit N-50BU
A
Pulse Generator
(PG-10N)
Rs = 50 â¦
W.F.Analyzer
(SAS-8130)
Ri = 50 â¦
Input Pulse
tr
tp
t
10%
VR
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
IF
trr
t
Irr = 0.1 · IR
IF = 10 mA
VR = 6 V
RL = 100 â¦
1
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese