MA2J112 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Switching Diodes

Switching Diodes
MA2J112
Silicon epitaxial planar type
For switching circuits
I Features
• Small S-mini type package, allowing high-density mounting
• Ensuring the average forward current capacity I_F(AV) = 200 mA
I Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
V_R
40
V
Peak reverse voltage
V_RM
40
V
Average forward current^*1
I_F(AV)
200
mA
Peak forward current
I_FM
600
mA
Non-repetitive peak forward
I_FSM
1
A
surge current^*2
Junction temperature
Storage temperature
T_j
150
°C
T_stg
−55 to +150
°C
Note) *1 : With a printed-circuit board
*2 : t = 1 s
Unit : mm
K
A
2
1
0.4 ± 0.1
1.7 ± 0.1
2.5 ± 0.2
0.4 ± 0.1
1 : Anode
2 : Cathode
S-Mini Type Package (2-pin)
Marking Symbol: 1C
I Electrical Characteristics T_a = 25°C
Parameter
Symbol
Conditions
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time^*
I_R1
V_R = 15 V
I_R2
V_R = 35 V
I_R3
V_R = 35 V, T_a = 100°C
V_F
I_F = 200 mA
C_t
V_R = 0 V, f = 1 MHz
t_rr
I_F = 10 mA, V_R = 6 V
I_rr = 0.1 · I_R, R_L = 100 Ω
Note) 1. Rated input/output frequency: 100 MHz
2. * : t_rr measuring circuit
Bias Application Unit N-50BU
Input Pulse
t_r
t_p
t
10%
A
Pulse Generator
(PG-10N)
R_s = 50 Ω
W.F.Analyzer
(SAS-8130)
R_i = 50 Ω
V_R
90%
t_p = 2 µs
t_r = 0.35 ns
δ = 0.05
Min Typ Max
50
500
100
1.1
4
10
Output Pulse
I_F
t_rr
t
I_rr = 0.1 · I_R
I_F = 10 mA
V_R = 6 V
R_L = 100 Ω
Unit
nA
nA
µA
V
pF
ns
1