MA2HD07 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Schottky Barrier Diodes (SBD)

Schottky Barrier Diodes (SBD)
MA2HD07
Silicon epitaxial planar type
For high frequency rectification
I Features
• I_F(AV) = 1 A rectification is possible
• Half New Mini-power package
I Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage (DC)
V_R
30
V
Repetitive peak reverse-voltage
V_RRM
30
V
Average forward current
I_F(AV)
1
A
Non-repetitive peak forward-
I_FSM
25
A
surge-current ^*
Junction temperature
T_j
125
°C
Storage temperature
T_stg
−40 to +125
°C
Note) *: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
1.9±0.1
2
Unit: mm
1.85±0.2
1
8°
0.25^{+–00..015}
1.0±0.2
1 : Anode
2 : Cathode
HNMiniP2-J1 Package
Marking Symbol: PQ
I Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time ^*
I_R
V_R = 30 V
V_F
I_F = 1 A
C_t
V_R = 10 V, f = 1 MHz
t_rr
I_F = I_R = 100 mA
I_rr = 10 mA, R_L = 100 Ω
7
mA
0.37
V
50
pF
15
ns
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
2. Rated input/output frequency: 20 MHz
3. *: t_rr measuring instrument
Bias Application Unit N-50BU
A
Pulse Generator
(PG-10N)
R_s = 50 Ω
Wave Form Analyzer
(SAS-8130)
R_i = 50 Ω
Input Pulse
t_r
t_p
t
10%
V_R
90%
t_p = 2 µs
t_r = 0.35 ns
δ = 0.05
Output Pulse
I_F
t_rr
t
I_rr = 10 mA
I_F = 100 mA
I_R = 100 mA
R_L = 100 Ω
Publication date: August 2001
SKH00010AED
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