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| MA2H735 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Schottky Barrier Diodes (SBD) | |||
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Schottky Barrier Diodes (SBD)
MA2H735
Silicon epitaxial planar type
For switching circuits
I Features
⢠Small and thin Half New Mini-power package
⢠Allowing to rectify under (IF(AV) = 1 A) condition
⢠Low VF (forward voltage) type: VF > 0.5 Vʢat IF = 1 Aʣ
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
VR
30
V
Repetitive peak reverse voltage VRRM
30
V
Average forward current
IF(AV)
1
A
Non-repetitive peak forward
IFSM
30
A
surge current*
Junction temperature
Storage temperature
Tj
125
°C
Tstg
â40 to +125
°C
Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave
(non-repetitive)
3.2 ± 0.1
Unit : mm
0 to 0.05
2
1
0.9 ± 0.2
0.9 ± 0.2
3.8 ± 0.2
1 : Anode
2 : Cathode
Half New Mini-Power Package
Marking Symbol: A
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Reverse current (DC)
IR
Forward voltage (DC)
VF
Terminal capacitance
Ct
Reverse recovery time*
trr
Note) 1. Rated input/output frequency: 20 MHz
2. * : trr measuring instrument
Conditions
VR = 30 V
IF = 1 A
VR = 10 V, f = 1 MHz
IF = IR = 100 mA
Irr = 0.1 · IR, RL = 100 â¦
Bias Application Unit N-50BU
A
Pulse Generator
(PG-10N)
Rs = 50 â¦
W.F.Analyzer
(SAS-8130)
Ri = 50 â¦
Input Pulse
tr
tp
t
10%
VR
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
IF
trr
t
Irr = 0.1 · IR
IF = 100 mA
IR = 100 mA
RL = 100 â¦
Min Typ Max Unit
1
mA
0.50
V
50
pF
30
ns
1
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