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| MA2D755 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Schottky Barrier Diodes | |||
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Schottky Barrier Diodes (SBD)
MA2D755
Silicon epitaxial planar type
For switching power supply
I Features
⢠TO-220D Package
⢠Allowing to rectify under (IF(AV) = 5 A) condition
⢠VR = 60 V guaranteed
⢠Single type
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Repetitive peak reverse voltage VRRM
60
V
Average forward current
IF(AV)
5
A
Non-repetitive peak forward
IFSM
90
A
surge current*
Junction temperature
Tj
â40 to +125
°C
Storage temperature
Tstg
â40 to +125
°C
Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave
(non-repetitive)
9.9 ± 0.3
Unit : mm
4.6 ± 0.2
2.9 ± 0.2
Ï 3.2 ± 0.1
1.4 ± 0.2
0.8 ± 0.1
5.08 ± 0.5
2.54 ± 0.3
1
2
2.6 ± 0.1
0.55 ± 0.15
1 : Cathode
2 : Anode
TO-220D Package (2-pin)
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Thermal resistance
IR
VF
Rth(j-c)
VR = 60 V
IF = 5 A
Direct current (between junction and case)
3
mA
0.58
V
3 °C/W
Note) Rated input/output frequency: 150 kHz
1
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