MA2D750 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – For switching mode power supply

Schottky Barrier Diodes (SBD)
MA2D750
Silicon epitaxial planar type
For switching mode power supply
I Features
• I_F(AV) = 10 A rectification is possible
• Single type
• TO-220D-B1 package
I Absolute Maximum Ratings T_C = 25°C
Parameter
Symbol Rating
Unit
Repetitive peak reverse-voltage V_RRM
40
V
Average forward current
I_F(AV)
10
A
Non-repetitive peak forward-
I_FSM
60
A
surge-current ^*
Junction temperature
Storage temperature
T_j
−40 to +125
°C
T_stg
−40 to +125
°C
Note) *: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
9.9±0.3
Unit: mm
4.6±0.2
2.9±0.2
φ 3.2±0.1
1.4±0.2
0.8±0.1
2.6±0.1
0.55±0.15
2.54±0.30
5.08±0.50
1
2
1 : Cathode
2 : Anode
TO-220D-B1 Package
I Electrical Characteristics T_C = 25°C ± 3°C
Parameter
Symbol
Conditions
Reverse current (DC)
Forward voltage (DC)
High voltage rectification
I_R
V_F
R_th(j-c)
V_R = 40 V, T_C = 25°C
I_F = 10 A, T_C = 25°C
Note) _{Rated input/output frequency: 10 MHz}
Min Typ Max Unit
3
mA
0.55
V
3.0 °C/W
Publication date: August 2001
SKH00005AED
1