MA2D749 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Schottky Barrier Diodes

Schottky Barrier Diodes (SBD)
MA2D749
Silicon epitaxial planar type
For switching power supply
I Features
• TO-220D Package
• Allowing to rectify under (I_F(AV) = 5 A) condition
• Single type
I Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol
Rating
Unit
Repetitive peak reverse voltage V_RRM
40
V
Average forward current
I_F(AV)
5
A
Non-repetitive peak forward
I_FSM
60
A
surge current^*
Junction temperature
Storage temperature
T_j
−40 to +125
°C
T_stg
−40 to +125
°C
Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave
(non-repetitive)
9.9 ± 0.3
Unit : mm
4.6 ± 0.2
2.9 ± 0.2
φ 3.2 ± 0.1
1.4 ± 0.2
0.8 ± 0.1
5.08 ± 0.5
2.54 ± 0.3
1
2
2.6 ± 0.1
0.55 ± 0.15
1 : Cathode
2 : Anode
TO-220D Package
I Electrical Characteristics T_a = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Thermal resistance
I_R
V_F
R_th(j-c)
V_R = 40 V
I_F = 5 A
Direct current (between junction and case)
3
mA
0.55
V
3.5 °C/W
Note) Rated input/output frequency: 150 kHz
1