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| MA2C856 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Band Switching Diodes | |||
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Band Switching Diodes
MA2C856
Silicon epitaxial planar type
For band switching
I Features
⢠Extra-small DHD envelope, allowing to insert into a 5 mm pitch
hole
⢠Less voltage dependence of the terminal capacitance Ct
⢠Low forward dynamic resistance rf
⢠Optimum for a band switching of a tuner
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
Forward current (DC)
Operating ambient temperature
Storage temperature
VR
35
V
IF
100
mA
Topr
â25 to +85
°C
Tstg
â55 to +100
°C
Ï 0.45 max.
COLORED BAND
1
INDICATES
CATHODE
Unit : mm
2
Ï 1.75 max.
1 : Cathode
2 : Anode
JEDEC : DO-34
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Reverse current (DC)*
IR
Forward voltage (DC)
VF
Terminal capacitance
Ct
Forward dynamic resistance
rf
Note) 1ɽRated input/output frequency: 100 MHz
ɹ 2ɽ* : Measurement with the beam shielded
Conditions
VR = 33 V
IF = 100 mA
VR = 15 V, f = 1 MHz
IF = 3 mA, f = 100 MHz
I Cathode Indication
Type No.
Color
MA2C856
Yellow
Min Typ Max Unit
100 nA
1
V
2
pF
0.85
â¦
1
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