MA2C774 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Schottky Barrier Diodes

Schottky Barrier Diodes (SBD)
MA2C774
Silicon epitaxial planar type
For super-high speed switching circuit
For small current rectification
I Features
• Sealed in small glass package (DO-34)
• Allowing to insert to a 5 mm pitch hole
• Allowing to rectify under (I_F(AV) = 100 mA) condition
• Optimum for high-frequency rectification because of its short
reverse recovery time (t_rr)
• Low V_F (forward rise voltage), with high rectification efficiency
I Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
V_R
30
V
Repetitive peak reverse voltage V_RRM
30
V
Peak forward current
I_FM
300
mA
Average forward current
I_F(AV)
100
mA
Non-repetitive peak forward
I_FSM
2
A
surge current^*
Junction temperature
Storage temperature
T_j
150
°C
T_stg
−55 to +150
°C
Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave
(non-repetitive)
Unit : mm
φ 0.45 max.
COLORED BAND
1
INDICATES
CATHODE
2
φ 1.75 max.
1 : Cathode
2 : Anode
JEDEC : DO-34
I Electrical Characteristics T_a = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time^*
I_R
V_R = 30 V
V_F
I_F = 100 mA
C_t
V_R = 0 V, f = 1 MHz
t_rr
I_F = I_R = 100 mA
I_rr = 10 mA, R_L = 100 Ω
15
µA
0.55
V
30
pF
1.5
ns
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
ɹ 2. Rated input/output frequency: 1 000 MHz
3. * : t_rr measuring circuit
I Cathode Indication
Type No.
MA2C774
Bias Application Unit N-50BU
Input Pulse
t_r
t_p
t
10%
Output Pulse
I_F
t_rr
t
Color 1st Band Light Green
A
Pulse Generator
(PG-10N)
R_s = 50 Ω
W.F.Analyzer
(SAS-8130)
R_i = 50 Ω
V_R
90%
t_p = 2 µs
t_r = 0.35 ns
δ = 0.05
I_rr = 10 mA
I_F = 100 mA
I_R = 100 mA
R_L = 100 Ω
1