MA2C723 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Schottky Barrier Diodes

Schottky Barrier Diodes (SBD)
MA2C723
Silicon epitaxial planar type
For super-high speed switching circuit
For small current rectification
I Features
• Allowing to rectify under (I_F(AV) = 200 mA) condition
• Sealed in DO-34 (DHD) package
• Allowing high-density mounting (5 mm pitch insertion)
• High reliability
φ 0.45 max.
COLORED BAND
1
INDICATES
CATHODE
Unit : mm
I Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
V_R
30
V
Non-repetitive peak forward
I_FSM
1.5
A
surge current^*
Peak forward current
I_FM
300
mA
Forward current (DC)
Junction temperature
Storage temperature
I_F(AV)
200
mA
T_j
150
°C
T_stg
−55 to +150
°C
Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive)
2
φ 1.75 max.
1 : Casthode
2 : Anode
JEDEC : DO-34
I Electrical Characteristics T_a = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time^*
I_R
V_R = 30 V
V_F
I_F = 200 mA
C_t
V_R = 0 V, f = 1 MHz
t_rr
I_F = I_R = 100 mA
I_rr = 10 mA, R_L = 100 Ω
50
µA
0.55
V
30
pF
3.0
ns
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment
ɹ 2. Rated input/output frequency: 1 000 MHz
3. * : t_rr measuring instrument
I Cathode Indication
Color band in pink
Bias Application Unit N-50BU
A
Pulse Generator
(PG-10N)
R_s = 50 Ω
W.F.Analyzer
(SAS-8130)
R_i = 50 Ω
Input Pulse
t_r
t_p
t
10%
V_R
90%
t_p = 2 µs
t_r = 0.35 ns
δ = 0.05
Output Pulse
I_F
t_rr
t
I_rr = 10 mA
I_F = 100 mA
I_R = 100 mA
R_L = 100 Ω
1