MA2C719 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon epitaxial planar type

Schottky Barrier Diodes (SBD)
MA2C719
Silicon epitaxial planar type
For high-frequency rectification
I Features
• DO-34 (DHD) package, allowing to rectify under (I_F(AV) = 500
mA) condition
• Allowing high-density mounting (5 mm pitch insertion)
• Optimum for high-frequency rectification because of its short
reverse recovery time (t_rr)
• High rectification efficiency caused by its low forward-rise-
voltage (V_F)
• High reliability achieved by the glass sealed package
I Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
V_R
40
V
Repetitive peak reverse voltage V_RRM
40
V
Peak forward current
I_FM
1
A
Average forward current
I_F(AV)
500
mA
Non-repetitive peak forward
I_FSM
30
A
surge current^*
Junction temperature
Storage temperature
T_j
125
°C
T_stg
−55 to +125
°C
Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive)
φ 0.45 max.
COLORED BAND
1
INDICATES
CATHODE
Unit : mm
1st Band
2nd Band
2
φ 1.75 max.
1 : Cathode
2 : Annde
JEDEC : DO-34
I Electrical Characteristics T_a = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
I_R
V_R = 35 V
V_F
I_F = 500 mA
C_t
V_R = 0 V, f = 1 MHz
100 µA
0.55
V
60
pF
Reverse recovery time^*
t_rr
I_F = I_R = 100 mA
I_rr = 10 mA, R_L = 100 Ω
5
ns
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment
ɹ 2. Rated input/output frequency: 400 MHz
3. * : t_rr measuring instrument
I Cathode Indication
Bias Application Unit N-50BU
A
Pulse Generator
(PG-10N)
R_s = 50 Ω
W.F.Analyzer
(SAS-8130)
R_i = 50 Ω
Input Pulse
t_r
t_p
t
10%
V_R
90%
t_p = 2 µs
t_r = 0.35 ns
δ = 0.05
Output Pulse
I_F
t_rr
t
I_rr = 10 mA
I_F = 100 mA
I_R = 100 mA
R_L = 100 Ω
Color
1st Band 2nd Band
Silver
Silver
1