MA2C700 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Schottky Barrier Diodes (SBD)

Schottky Barrier Diodes (SBD)
MA2C700, MA2C700A
Silicon epitaxial planar type
For ordinary wave detection
For super high speed switching
I Features
• Low forward rise voltage (V_F) and satisfactory wave detection
efficiency (η)
• Small temperature coefficient of forward characteristic
• Extremely low reverse current I_R
• DO-34(DHD) envelope, allowing to insert to a 5 mm pitch hole
φ 0.45 max.
COLORED BAND
1
INDICATES
CATHODE
Unit : mm
1st Band
2nd Band
I Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage ^MA2C700
V_R
15
V
(DC)
MA2C700A
30
Peak reverse
MA2C700
V_RM
15
V
voltage
MA2C700A
30
Peak forward current
Forward current (DC)
Junction temperature
Storage temperature
I_FM
150
mA
I_F
30
mA
T_j
125
°C
T_stg
−55 to +125
°C
2
φ 1.75 max.
1 : Cathode
2 : Anode
JEDEC : DO-34
I Electrical Characteristics T_a = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC) MA2C700
I_R
MA2C700A
Forward voltage (DC)
V_F1
V_F2
Terminal capacitance
C_t
Reverse recovery time^*
t_rr
V_R = 15 V
V_R = 30 V
I_F = 1 mA
I_F = 30 mA
V_R = 1 V, f = 1 MHz
I_F = I_R = 10 mA
I_rr = 1 mA, R_L = 100 Ω
100 nA
150
0.4
V
1
V
1.3
pF
1
ns
Detection efficiency
η
V_in = 3 V_(peak), f = 30 MHz
R_L = 3.9 kΩ, C_L = 10 pF
60
%
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment
ɹ 2. Rated input/output frequency: 2 000 MHz
3. * : t_rr measuring instrument
Bias Application Unit N-50BU
Input Pulse
t_r
t_p
t
10%
A
Pulse Generator
(PG-10N)
R_s = 50 Ω
W.F.Analyzer
(SAS-8130)
R_i = 50 Ω
V_R
90%
t_p = 2 µs
t_r = 0.35 ns
δ = 0.05
Output Pulse
I_F
t_rr
t
I_rr = 1 mA
I_F = 10 mA
I_R = 10 mA
R_L = 100 Ω
I Cathode Indication
Type No.
MA2C700 MA2C700A
Color 1st Band Silver
Silver
2nd Band 
Green
1