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| MA2C188 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon epitaxial planar type | |||
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Switching Diodes
MA2C188
Silicon epitaxial planar type
For high speed and high voltage switching, small-power
rectification
I Features
⢠Small glass type (DO-34) package, allowing to insert into a 5 mm
pitch hole
⢠High voltage (VR: 200 V) rectification is possible
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
VR
200
V
Peak reverse voltage
VRM
250
V
Average power dissipation
PF(AV)
400
mW
Output current
IO
200
mA
Repetitive peak forward current IFRM
625
mA
Non-repetitive peak forward
IFSM
1
A
surge current*
Junction temperature
Storage temperature
Tj
175
°C
Tstg
â65 to +175
°C
Note) * : t = l s
Ï 0.45 max.
COLORED BAND
1
INDICATES
CATHODE
Unit : mm
2
Ï 1.75 max.
1: Cathode
2: Anode
JEDEC: DO-34
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Reverse current (DC)
IR
Forward voltage (DC)
VF
Reverse voltage (DC)
VR
Terminal capacitance
Ct
Reverse recovery time*
trr
Note) 1. Rated input/output frequency: 20 MHz
2. * : trr measuring circuit
Conditions
VR = 200 V
IF = 200 mA
IR = 100 µA
VR = 0 V, f = 1 MHz
IF = 10 mA, VR = 1 V
Irr = 0.1 · IR, RL = 100 â¦
Min Typ Max Unit
200 nA
1.2
V
250
V
1.0
pF
60
ns
Bias Application Unit N-50BU
A
Pulse Generator
(PG-10N)
Rs = 50 â¦
W.F.Analyzer
(SAS-8130)
Ri = 50 â¦
Input Pulse
tr
tp
t
10%
VR
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Puls
IF
trr
t
Irr = 0.1 · IR
IF = 10 mA
VR = 1 V
RL = 100 â¦
1
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