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| MA2C185 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon epitaxial planar type | |||
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Switching Diodes
MA2C185
Silicon epitaxial planar type
For high-voltage switching circuits, small power rectification
I Features
⢠High reverse voltage (VR = 200 V)
⢠Large output current IO
⢠Small glass type (DO-34) package, allowing to insert into a 5 mm
pitch hole
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
VR
200
V
Repetitive peak reverse voltage VRRM
250
V
Output current
IO
200
mA
Repetitive peak reverse current
IFRM
625
mA
Non-repetitive peak forward
IFSM
1
A
surge current surge current*
Average power dissipation
Junction temperature
Storage temperature
PF(AV)
400
mW
Tj
175
°C
Tstg
â65 to +175
°C
Note) * : t = l s
Ï 0.45 max.
COLORED BAND
1
INDICATES
CATHODE
Unit : mm
1st Band
2nd Band
2
Ï 1.75 max.
1: Cathode
2: Anode
JEDEC: DO-34
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Reverse current (DC)
IR
Forward voltage (DC)
VF
Reverse voltage (DC)
VR
Terminal capacitance
Ct
Note) Rated input/output frequency: 3 MHz
Conditions
VR = 200 V
IF = 200 mA
IR = 100 µA
VR = 0 V, f = 1 MHz
Min Typ Max Unit
200 nA
1.2
V
250
V
4.5
pF
I Cathode Indication
Type No.
MA2C185
Color 1st Band White
2nd Band Green
1
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