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| MA2B190 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon epitaxial planar type | |||
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Switching Diodes
MA2B190
Silicon epitaxial planar type
For switching circuits
I Features
⢠Low forward dynamic resistance rf
⢠Small terminal capacitance, Ct
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
VR
35
V
Repetitive peak reverse voltage VRRM
35
V
Average forward current
IF(AV)
100
mA
Repetitive peak forward current IFRM
225
mA
Non-repetitive peak forward
IFSM
500
mA
surge current*
Junction temperature
Storage temperature
Tj
200
°C
Tstg
â55 to +200
°C
Note) * : t = 1 s
Ï 0.56 max.
1
COLORED BAND
INDICATES
CATHODE
Unit : mm
1st Band
2nd Band
2
Ï 1.95 max.
1: Cathode
2: Anode
JEDEC: DO-35
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Reverse current (DC)
Forward voltage (DC)
Reverse voltage (DC)
Terminal capacitance
Forward dynamic resistance
Reverse recovery time*3
IR1
VR = 15 V
IR2
VR = 30 V
IR3
VR = 35 V, Ta = 150°C
VF
IF = 100 mA
VR
IR = 100 µA
Ct
VR = 0 V, f = 1 MHz
rf*1
IF = 3 mA, f = 30 MHZ
rf*2
IF = 3 mA, f = 30 MHZ
trr
IF = 10 mA, VR = 1 V
Irr = 0.1 · IR, RL = 100 â¦
Note) 1. Rated input/output frequency: 2.5 MHz
2. *1 : rf measuring instrument: Nihon Koshuha Model TDC-121A
*2 : rf measuring instrument: YHP 4191A RF IMPEDANCE ANALYZER
*3 : trr measuring circuit
Bias Application Unit N-50BU
I Cathode Indication
Type No.
MA2B190
Color 1st Band White
2nd Band White
A
Pulse Generator
(PG-10N)
Rs = 50 â¦
W.F.Analyzer
(SAS-8130)
Ri = 50 â¦
Min Typ Max Unit
0.005 µA
0.01 µA
100 µA
1.2
V
35
V
4
pF
2.5
â¦
3.6
â¦
0.2
ms
Input Pulse
tr
tp
t
10%
VR
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
IF
trr
t
Irr = 0.1 · IR
IF = 10 mA
VR = 1 V
RL = 100 â¦
1
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