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| MA2B170 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon epitaxial planar type | |||
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Switching Diodes
MA2B170, MA2B171
Silicon epitaxial planar type
For high-speed switching circuits
I Features
⢠Large forward current IF(AV)
⢠High switching speed
⢠Small terminal capacitance, Ct
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage MA2B170
VR
40
V
(DC)
MA2B171
80
Repetitive peak MA2B170 VRRM
40
V
reverse voltage MA2B171
80
Average forward current
IF(AV)
200
mA
Repetitive peak forward current IFRM
600
mA
Non-repetitive peak
forward surge current*
IFSM
1
A
Junction temperature
Storage temperature
Note) * : t = 1 s
Tj
200
°C
Tstg
â55 to +200
°C
Ï 0.56 max.
1
COLORED BAND
INDICATES
CATHODE
Unit : mm
1st Band
2nd Band
2
Ï 1.95 max.
1 : Cathode
2 : Anode
JEDEC : DO-35
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Reverse current (DC) MA2B170
IR1
MA2B171
MA2B170
IR2
MA2B171
MA2B170
IR
MA2B171
Forward voltage (DC)
VF
Terminal capacitance
Ct
Reverse recovery time*
trr
Note) 1. Rated input/output frequency: 100 MHz
Conditions
VR = 15 V
VR = 35 V
VR = 75 V
VR = 35 V, Ta = 150°C
VR = 75 V, Ta = 150°C
IF = 200 mA
VR = 0 V, f = 1 MHz
IF = 10 mA, VR = 1 V
Irr = 0.1 · IR, RL = 100 â¦
2. * : trr measuring circuit
I Cathode Indication
Type No.
MA2B170 MA2B171
Color 1st Band Violet
2nd Band White
Violet
Green
Bias Application Unit N-50BU
A
Pulse Generator
(PG-10N)
Rs = 50 â¦
W.F.Analyzer
(SAS-8130)
Ri = 50 â¦
Min Typ Max Unit
50
nA
500 nA
500
100 µA
100
1.1
V
4
pF
20
ns
Input Pulse
tr
tp
t
10%
VR
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
IF
trr
t
Irr = 0.1 · IR
IF = 10 mA
VR = 1 V
RL = 100 â¦
1
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