MA2B027 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon epitaxial planar type variable resistor

Varistors
MA2B027 Series
Silicon epitaxial planar type variable resistor
For temperature and reduced voltage compensation
I Features
• High reliability achieved through combination of a planar type
chip and glass sealing structure
• Easy mounting because of employing DO-35 (DHD) envelope
• Extremely small reverse current I_R
• Large power dissipation
• Wide forward voltage V_F range
I Absolute Maximum Ratings T_a = 25°C
φ 0.56 max.
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COLORED BAND
INDICATES
CATHODE
Unit : mm
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
V_R
6
V
Forward
MA2B0270A/B
I_FM
150
mA
current (DC) _MA2B027WA/WB
100
MA2B027TA/TB
70
MA2B027QA/QBɹ
50
Power dissipation
Junction temperature
Storage temperature
P_D
150
mW
T_j
150
°C
T_stg
−55 to +150
°C
2
φ 1.95 max.
1É¿Cathode
2É¿Anode
JEDECÉ¿DO-35
I Electrical Characteristics T_a = 25°C
Parameter
Reverse current MA2B0270A/B
(DC)
MA2B027WA/WB
MA2B027TA/TB
MA2B27QA/QB
Forward voltage MA2B0270A
(DC)
MA2B0270B
MA2B027WA/WB
MA2B027TA/TB
MA2B027QA/QB
Forward voltage MA2B0270A/B
(DC)
MA2B027WA
MA2B027WB
MA2B027TA
MA2B027TB
MA2B027QA
MA2B027QB
Temperature
coefficient of
forward voltage
MA2B0270A/B
MA2B027WA/WB
MA2B027TA/TB
MA2B027QA/QB
Symbol
I_R
V_F1
V_F2
−∆V_F/∆T
V_R = 6 V
V_R = 6 V
Conditions
I_F = 1.5 mA
I_F = 10 µA
I_F = 50 mA
I_F = 3 mA
I_F = 1.5 mA
I_F = 3 mA
Min Typ Max Unit
10
µA
1
0.56
0.61
V
0.59
0.64
0.77
1.15
1.60
1.1
V
1.18
1.28
1.26
1.36
1.76
1.92
1.88
2.04
2.20
2.40
2.34
2.54
2.0
mV/°C
4.6
6.5
8.8
Note) Rated input/output frequency: 100 MHz
I Cathode Indication
Type No. MA2B0270A MA2B0270B MA2B027WA MA2B027WB MA2B927TA^* MA2B027TB^* MA2B027QA^* MA2B027QB^*
Color
Yellow
Blue Light Blue Brown
Yellow
Blue
Green
Brown
Note) * : Body Color ; Black
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