MA2B001 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon planar type trigger device

Trigger Devices
MA2B001
Silicon planar type trigger device
Thyristor TRIAC trigger circuit
I Features
• Satisfactory symmetry of V_BO
• Large V_O and small I_BO
I Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol
Rating
Unit
Average total power dissipation P_(AV)
150
mW
Peak current^*1
I_PM
2.0
A
Operating ambient temperature^*2
T_opr
100
°C
Storage temperature
T_stg
−55 to +125
°C
Note) *1 : T_a < 50°C, t = 10 µs, repetitive frequency 60 Hz
*2 : Maximum ambient temperature during operation
φ 0.56 max.
Unit : mm
φ 1.95 max.
DO-35 Package
I Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Breakover current
Breakover voltage^*1
Output voltage^*1
Temperature coefficient of
breakover voltage
I_BO
V_BO
V_O
T.C.(V_BO)
V = V_BO
I = I_BO
50
µA
28
36
V
4.0 7.0
V
0.1
%/°C
Breakover voltage deviation^*2
∆V_BO
3.5
V
Note) 1. Rated input/output frequency: 100 MHz
2. *1 : Measurement of V_BO and V_O
*2 : Symmetry of V_BO
V_BO
30 kΩ 70 kΩ
V_O
V_BO'
V_BO
100 V_rms
0.068 µF
20 Ω
1