MA27V11 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon epitaxial planar type

Variable Capacitance Diodes
MA27V11
Silicon epitaxial planar type
For VCO
■ Features
• Good linearity and large capacitance-ratio in C_D − V_R relation
• High frequency type by this low capacitance
• Ultraminiature Package 1.0 mm × 0.6 mm (height: 0.52 mm),
optimum for high-density mounting and high-speed mounting
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage
Junction temperature
Storage temperature
V_R
8
V
T_j
125
°C
T_stg
−55 to +125
°C
0.27^{+–00..0025}
2
0.10^{+–00..0025}
Unit: mm
1
0.60±0.05
5˚
1: Anode
2: Cathode
SSSMini2-F1 Package
Marking Symbol: D
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Reverse current
Diode capacitance
Capacitance ratio
Series resistance ^*
I_R
C_D(1V)
C_D(4V)
C_D(1V) /C_D(4V)
r_D
V_R = 5 V
V_R = 1 V, f = 1 MHz
V_R = 4 V, f = 1 MHz
V_R = 4 V, f = 470 MHz
Min Typ Max Unit
10
nA
2.77
3.01 pF
1.23
1.34
2.16
2.34 
0.35
Ω
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 470 MHz.
3. _*: Measuring instrument; YHP MODEL 4191A RF IMPEDANCE ANALYZER
Publication date: March 2004
SKD00059BED
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