MA27P11 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – SILICON EPITAXIAL PLANAR TYPE

PIN diodes
MA27P11
Silicon epitaxial planar type
For high frequency switch
■ Features
• Low terminal capacitance
• Low forward dynamic resistance
• SSS-Mini type 2-pin package
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage
Forward current
Junction temperature
Storage temperature
V_R
60
V
I_F
50
mA
T_j
150
°C
T_stg −55 to +150
°C
0.27^{+–00..0025}
1
Unit: mm
0.12^{+–00..0025}
2
0.60±0.05
5°
1: Anode
2: Cathode
SSSMini2-F2 Package
Marking Symbol: F
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Forward voltage
Reverse current
Terminal capacitance
Forward dynamic resistance
V_F1
I_F = 1 mA
V_F2
I_F = 10 mA
I_R
V_R = 60 V
C_t
V_R = 0 V, f = 1 MHz
r_f1
I_F = 1 mA, f = 100 MHz
r_f2
I_F = 10 mA, f = 100 MHz
0.76 0.85 V
0.85 1.00 V
1.0 100 nA
0.55 0.80 pF
1.6 3.0
Ω
0.9 1.5
Ω
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
Publication date: April 2003
SKL00014AED
1