MA27P02 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon epitaxial planar type

PIN diodes
MA27P02
Silicon epitaxial planar type
For high frequency switch
■ Features
• Small terminal capacitance C_t
• Small forward dynamic resistance r_f
• Ultraminiature package and surface mounting type
1.0 mm × 0.6 mm (height: 0.52 mm)
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage
Forward current
Power dissipation ^*
Junction temperature
Storage temperature
V_R
60
V
I_F
100
mA
P_D
150
mW
T_j
150
°C
T_stg
−55 to +150
°C
Note) *: With a glass epoxy PC board
0.27^{+–00..0025}
2
0.13^{+–00..0025}
Unit: mm
1
0.60±0.05
5°
1: Anode
2: Cathode
SSSMini2-F2 Package
Marking Symbol: Y
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Forward voltage
Reverse current
Terminal capacitance
Forward dynamic resistance ^*
V_F
I_F = 10 mA
I_R
V_R = 60 V
C_t
V_R = 1 V, f = 1 MHz
r_f
I_F = 10 mA, f = 100 MHz
1.0
V
100 nA
0.5
pF
2.0
Ω
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. _*: r_f measurement device ; agilent model 4291B
Publication date: March 2004
SKL00008BED
1