MA27P01 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon epitaxial planar type

PIN diodes
MA27P01
Silicon epitaxial planar type
For high frequency switch
s Features
• Low terminal capacitance: C_t ≤ 0.8 pF
• Low forward dynamic resistance: r_f ≤ 1.0 Ω
• Ultraminiature package and surface mounting type
1.0 mm × 0.6 mm (height: 0.52 mm)
s Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage (DC)
Forward current (DC)
Power dissipation ^*
Junction temperature
Storage temperature
V_R
60
V
I_F
100
mA
P_D
150
mW
T_j
150
°C
T_stg
−55 to +150
°C
Note) *: With a glass epoxy board
0.27^{+–00..0025}
2
0.13^{+–00..0025}
Unit: mm
1
0.60±0.05
5°
1: Anode
2: Cathode
SSSMini2-F2 Package
Marking Symbol: N
s Electrical Characteristics T_a = 25°C
Parameter
Symbol
Conditions
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Forward dynamic resistance ^*
I_R
V_R = 60 V
V_F
I_F = 10 mA
C_t
V_R = 1 V, f = 1 MHz
r_f
I_F = 10 mA, f = 100 MHz
Note) _*: Measuring instrument; AGILENT MODEL 4291B
Min Typ Max Unit
100 nA
1.0
V
0.8
pF
1.0
Ω
Publication date: April 2002
SKL00007AED
1