MA27E02 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon epitaxial planar type

Schottky Barrier Diodes (SBD)
MA27E02
Silicon epitaxial planar type
For cellular phone
■ Features
• High-frequency wave detection is possible.
• Low forward voltage V_F
• Small terminal capacitance C_t
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage
V_R
20
V
Maximum peak reverse voltage V_RM
20
V
Forward current
I_F
35
mA
Peak forward current
I_FM
100
mA
Junction temperature
T_j
125
°C
Storage temperature
T_stg
−55 to +125
°C
0.27^{+–00..0025}
2
0.13^{+–00..0025}
Unit: mm
1
0.60±0.05
5°
1: Anode
2: Cathode
SSSMini2-F2 Package
Marking Symbol: G
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Forward voltage
Reverse current
Terminal capacitance
Forward dynamic resistance
V_F1
I_F = 1 mA
V_F2
I_F = 35 mA
I_R
V_R = 15 V
C_t
V_R = 0 V, f = 1 MHz
r_f
I_F = 5 mA
0.40
V
1.0
V
200 nA
1.2
pF
9
Ω
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Rated input/output frequency: 2 GHz
Publication date: November 2003
SKH00129AED
1