MA27D27 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon epitaxial planar type

Schottky Barrier Diodes (SBD)
MA27D27
Silicon epitaxial planar type
For super high speed switching
■ Features
• Small reverse current I_R
• Optimum for high frequency rectification because of its short
reverse recovery time t_rr
• SSS-Mini type 2-pin package
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage
V_R
20
V
Repetitive peak reverse voltage V_RRM
20
V
Forward current (Average)
I_F(AV)
100
mA
Peak forward current
I_FM
200
mA
Non-repetitive peak forward
I_FSM
1
A
surge current ^*
Junction temperature
Storage temperature
T_j
150
°C
T_stg
−55 to +150
°C
Note) _*: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
0.60±0.05
1
Unit: mm
0.12^{+–00..0025}
2
0.27^{+–00..0025}
5°
1: Anode
2: Cathode
SSSMini2-F2 Package
Marking Symbol: 8L
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Forward voltage
Reverse current
Terminal capacitance
Reverse recovery time ^*
V_F1
I_F = 10 mA
V_F2
I_F = 100 mA
I_R
V_R = 10 V
C_t
V_R = 0 V, f = 1 MHz
t_rr
I_F = I_R = 100 mA
I_rr = 10 mA, R_L = 100 Ω
0.38 0.44
V
0.54 0.58
0.3
µA
11
pF
1
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Rated input/output frequency: 250 MHz
4. * : t_rr measurement circuit
Bias Application Unit (N-50BU)
Input Pulse
Output Pulse
Pulse Generator
(PG-10N)
A
R_s = 50 Ω
Wave Form
Analyzer
(SAS-8130)
R_i = 50 Ω
V_R
t_r
t_p
t
10%
90%
t_p = 2 µs
t_r = 0.35 ns
δ = 0.05
I_F
t_rr
t
I_rr = 10mA
I_F = I_R = 100 mA
R_L = 100 Ω
Publication date: March 2003
SKH00122AED
1