MA27784 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Schottky Barrier Diodes (SBD)

Schottky Barrier Diodes (SBD)
MA27784
Silicon epitaxial planar type
For high-speed switching circuits
■ Features
• High-density mounting is possible
• Low forward voltage V_F and good rectification efficiency
• Optimum for high frequency rectification because of its short
reverse recovery time (t_rr)
• SSS-Mini type 2-pin package
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage (DC)
V_R
30
V
Repectitive peak reverse voltage V_RRM
30
V
Average forward current
I_F(AV)
100
mA
Peak forward current
I_FM
300
mA
Non-repectitive peak forward
I_FSM
1
A
surge current ^*
Junction temperature
Storage temperature
T_j
125
°C
T_stg
−55 to +125
°C
Note) _*: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
0.27−+00..0025
2
Unit: mm
0.13−+00..0025
1
0.60±0.05
5°
(0.50)
1: Anode
2: Cathode
SSSMini2-F2 Package
Marking Symbol: P
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time ^*
I_R
V_R = 30 V
V_F
I_F = 100 mA
C_t
V_R = 0 V, f = 1 MHz
t_rr
I_F = I_R = 10 mA
I_rr = 0.1 · I_R , R_L = 100 Ω
15
nA
0.55
V
20
pF
2.0
ns
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
ɹ 2. Rated input/output frequency: 250 MHz
3. _*: t_rr measuring instrument
Bias Application Unit N-50BU
A
Pulse Generator
(PG-10N)
R_s = 50 Ω
Wave Form Analyzer
(SAS-8130)
R_i = 50 Ω
Input Pulse
t_r
t_p
t
10%
V_R
90%
t_p = 2 µs
t_r = 0.35 ns
δ = 0.05
Output Pulse
I_F
t_rr
t
I_rr = 0.1 · I_R
I_F = 100 mA
I_R = 100 mA
R_L = 100 Ω
Publication date: June 2002
SKH00120AED
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