MA27728 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Schottky Barrier Diodes (SBD)

Schottky Barrier Diodes (SBD)
MA27728
Silicon epitaxial planar type
For switching circuits
■ Features
• High-density mounting is possible
• Low forward voltage V_F and good wave detection efficiency η
• Small temperature coefficient of forward characteristic
• Small reverse current I_R
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage
Maximum peak reverse voltage
Forward current
Peak forward current
Junction temperature
Storage temperature
V_R
30
V
V_RM
30
V
I_F
30
mA
I_FM
150
mA
T_j
125
°C
T_stg
−55 to +125
°C
0.27^{+–00..0025}
2
Unit: mm
0.13^{+–00..0025}
1
0.60±0.05
5°
1: Anode
2: Cathode
SSSMini2-F2 Package
Marking Symbol: R
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Forward voltage
Reverse current
Terminal capacitance
Reverse recovery time ^*
Detection efficiency
V_F1
I_F = 1 mA
V_F2
I_F = 30 mA
I_R
V_R = 30 V
C_t
V_R = 1 V, f = 1 MHz
t_rr
I_F = I_R = 10 mA
I_rr = 1 mA, R_L = 100 Ω
η
V_IN = 3 V_(peak) , f = 30 MHz
R_L = 3.9 kΩ, C_L = 10 pF
0.4
V
1.0
300 nA
1.5
pF
1.0
ns
65
%
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 2 GHz
4. _*: t_rr measurement circuit
Bias Application Unit (N-50BU)
A
Pulse Generator
(PG-10N)
R_s = 50 Ω
Wave Form Analyzer
(SAS-8130)
R_i = 50 Ω
Input Pulse
t_r
t_p
t
10%
V_R
90%
t_p = 2 µs
t_r = 0.35 ns
δ = 0.05
Output Pulse
I_F
t_rr
t
I_rr = 1 mA
I_F = 10 mA
I_R = 10 mA
R_L = 100 Ω
Publication date: January 2004
SKH00119BED
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