MA27331 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon epitaxial planar type

Variable Capacitance Diodes
MA27331
Silicon epitaxial planar type
For VCO of a UHF radio
■ Features
• Good linearity of C − V curve
• Small series resistance r_D
• SSS-Mini type package, optimum for downsizing of equipment
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage
Junction temperature
Storage temperature
V_R
12
V
T_j
125
°C
T_stg
−55 to +125
°C
0.27^{+–00..0025}
2
0.10^{+–00..0025}
Unit: mm
1
0.60±0.05
5˚
1: Anode
2: Cathode
SSSMini2-F1 Package
Marking Symbol: A
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Reverse current
Diode capacitance
I_R
C_D(1V)
C_D(2V)
C_D(4V)
C_D(10V)
V_R = 12 V
V_R = 1 V, f = 1 MHz
V_R = 2 V, f = 1 MHz
V_R = 4 V, f = 1 MHz
V_R = 10 V, f = 1 MHz
Capacitance ratio
Series resistance ^*
C_D(1V) /C_D(4V)
C_D(2V) /C_D(10V)
r_D
C_D = 9 pF, f = 470 MHz
Min Typ Max Unit
10
nA
17.0
20.0 pF
14.0 15.0 16.0
10.0
12.4
5.5 6.0 6.5
1.53 1.60 1.83 
2.25 2.50 2.75
0.18 0.22
Ω
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 470 MHz.
3. *: Measuring instrument; YHP MODEL 4191A RF IMPEDANCE ANALYZER
Publication date: March 2004
SKD00061BED
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