MA27111 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon epitaxial planar type

Switching Diodes
MA27111
Silicon epitaxial planar type
For high-speed switching circuits
■ Features
• High-density mounting is possible
• Short reverse recovery time t_rr
• Small terminal capacitance C_t
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage
V_R
80
V
Maximum peak reverse voltage V_RM
80
V
Forward current
I_F
100
mA
Peak forward current
I_FM
225
mA
Non-repetitive peak forward
I_FSM
500
mA
surge current ^*
Junction temperature
Storage temperature
T_j
150
°C
T_stg
−55 to +150
°C
Note) _*: t = 1 s
0.27^{+–00..0025}
2
Unit: mm
0.13^{+–00..0025}
1
0.60±0.05
5°
1: Anode
2: Cathode
SSSMini2-F2 Package
Marking Symbol: S
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Forward voltage
Reverse voltage
Reverse current
Terminal capacitance
Reverse recovery time ^*
V_F
I_F = 100 mA
V_R
I_R = 100 µA
I_R
V_R = 75 V
C_t
V_R = 0 V, f = 1 MHz
t_rr
I_F = 10 mA, V_R = 6 V
I_rr = 0.1 I_R , R_L = 100 Ω
0.95 1.20
V
80
100 nA
0.6 2.0
pF
3
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 10 MHz.
3. _*: t_rr measurement circuit
Bias Application Unit N-50BU
A
Pulse Generator
(PG-10N)
R_s = 50 Ω
Wave Form Analyzer
(SAS-8130)
R_i = 50 Ω
Input Pulse
t_r
t_p
t
10%
V_R
90%
t_p = 2 µs
t_r = 0.35 ns
δ = 0.05
Output Pulse
I_F
t_rr
t
I_rr = 0.1 I_R
I_F = 10 mA
V_R = 6 V
R_L = 100 Ω
Publication date: November 2003
SKF00066BED
1