MA27077 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon epitaxial planar type

Band Switching Diodes
MA27077
Silicon epitaxial planar type
For band switching
■ Features
• Low forward dynamic resistance r_f
• Less voltage dependence of diode capacitance C_D
• SSS-Mini type package, allowing downsizing of equipment and
automatic insertion through the taping package
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage
V_R
35
V
Forward current
I_F
100
mA
Operating ambient temperature ^* T_opr
−25 to +85
°C
Storage temperature
T_stg
−55 to +125
°C
Note) *: Maximum ambient temperature during operation.
0.27^{+–00..0025}
2
Unit: mm
0.10^{+–00..0025}
1
0.60±0.05
5˚
1: Anode
2: Cathode
SSSMini2-F1 Package
Marking Symbol: C
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Forward voltage
Reverse current
Diode capacitance
Forward dynamic resistance ^*
V_F
I_F = 100 mA
I_R
V_R = 33 V
C_D
V_R = 6 V, f = 1 MHz
r_f
I_F = 2 mA, f = 100 MHz
0.92 1.00
V
0.01 100.00 nA
0.9 1.2
pF
0.65 0.85
Ω
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3. *: Measuring instrument; YHP MODEL 4191A RF IMPEDANCE ANALYZER
Publication date: March 2004
SKG00001BED
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