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MA26V15 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon epitaxial planar type | |||
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Variable Capacitance Diodes
MA26V15
Silicon epitaxial planar type
For VCO
â Features
⢠Good linearity and large capacitance-ratio in CD â VR relation
⢠Small series resistance rD
⢠High frequency type by this low capacitance
â Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage
Junction temperature
Storage temperature
VR
6
V
Tj
125
°C
Tstg
â55 to +125
°C
3
2
1
1.00±0.05
Unit: mm
0.39+â00..0031
0.25±0.05
0.25±0.05
1
3
2
0.65±0.01
0.05±0.03
Marking Symbol: 2N
1: Anode
2: N.C.
3: Cathode
ML3-N2 Package
â Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current
Diode capacitance
Capacitance ratio
Series resistance *
IR
CD(0.5V)
CD(2.5V)
CD(0.5V)/CD(2.5V)
rD
VR = 5 V
VR = 0.5 V, f = 1 MHz
VR = 2.5 V, f = 1 MHz
VR = 1 V, f = 470 MHz
10
nA
7.30
7.91 pF
2.98
3.23
2.35
2.55 
0.45
â¦
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 470 MHz
3. *: Measuring instrument; YHP MODEL 4191A RF IMPEDANCE ANALYZER
Publication date: July 7, 2003
SKD00083CED
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