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MA26V14 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon epitaxial planar type For VCO
Variable Capacitance Diodes
MA26V14
Silicon epitaxial planar type
For VCO
s Features
• Good linearity and large capacitance-ratio in CD − VR relation
• Small series resistance rD
• High frequency type by this low capacitance
s Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage (DC)
Junction temperature
Storage temperature
VR
6
V
Tj
125
°C
Tstg
−55 to +125
°C
3
2
1
1.00±0.05
Unit: mm
0.39+−00..0013
0.25±0.05
0.25±0.05
1
3
2
0.65±0.01
0.05±0.03
Marking Symbol: 3H
1: Anode
2: N.C.
3: Cathode
ML3-N2 Package
s Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Reverse current (DC)
Diode capacitance
Capacitance ratio
Series resistance *
IR
CD(1V)
CD(4V)
CD(1V)/CD(4V)
rD
VR = 5 V
VR = 1 V, f = 1 MHz
VR = 4 V, f = 1 MHz
VR = 4 V, f = 470 MHz
Note) 1. Rated input/output frequency: 470 MHz
2. *: Measuring instrument; YHP MODEL 4191A RF IMPEDANCE ANALYZER
Min Typ Max Unit
10
nA
4.99
5.41 pF
2.33
2.53
2.05
2.23 
0.40
Ω
Publication date: April 2002
SKD00082AED
1