MA26V09 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon epitaxial planar type

Variable Capacitance Diodes
MA26V09
Silicon epitaxial planar type
For VCO
■ Features
• Good linearity and large capacitance-ratio in C_D − V_R relation
• Small series resistance r_D
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage (DC)
Junction temperature
Storage temperature
V_R
6
V
T_j
125
°C
T_stg
−55 to +125
°C
3
2
1
1.00±0.05
Unit: mm
0.39⁺−00..0031
0.25±0.05
0.25±0.05
1
3
2
0.65±0.01
0.05±0.03
Marking Symbol: 2S
1: Anode
2: N.C.
3: Cathode
ML3-N2 Package
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Reverse current (DC)
Diode capacitance
Capacitance ratio
Series resistance ^*
I_R
C_D(1V)
C_D(3V)
C_D(1V)/C_D(3V)
r_D
V_R = 5 V
V_R = 1 V, f = 1 MHz
V_R = 3 V, f = 1 MHz
V_R = 3 V, f = 470 MHz
Note) 1. Rated input/output frequency: 470 MHz
2. _*: Measuring instrument; YHP MODEL 4191A RF IMPEDANCE ANALYZER
Min Typ Max Unit
10
nA
14.9
16.4 pF
8.4
9.2
1.69
1.87 
0.35
Ω
Publication date: July 2002
SKD00078BED
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