MA26376 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon epitaxial planar type

Variable Capacitance Diodes
MA26376
Silicon epitaxial planar type
For UHF wireless telegraphic VCO
■ Features
• Good linearity and large capacitance-ratio in C_D − V_R relation
• Small series resistance r_D
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage
Junction temperature
Storage temperature
V_R
6
V
T_j
125
°C
T_stg
−55 to +125
°C
Unit: mm
3
2
1
1.00±0.05
0.39⁺−00..0031
0.25±0.05
0.25±0.05
1
3
2
0.65±0.01
0.05±0.03
Marking Symbol: 2T
1: Anode
2: N.C.
3: Cathode
ML3-N2 Package
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current
Diode capacitance
Series resistance ^*
I_R
C_D1V
C_D3V
r_D
V_R = 6 V
V_R = 1 V, f = 1 MHz
V_R = 3 V, f = 1 MHz
C_D = 9 pF, f = 470 MHz
14.00
6.80
10
nA
16.00 pF
8.90
0.3
Ω
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring method for diodes.
2. Absolute frequency of input and output is 470 MHz.
3. *: Measuring instrument; YHP MODEL 4191A RF IMPEDANCE ANALYZER
Publication date: January 2004
SKD00071CED
1