MA26111 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon epitaxial planar type

Switching Diodes
MA26111
Silicon epitaxial planar type
For switching circuits
 Features
 Allowing high-density mounting
 Short reverse recovery time t_rr
 Small terminal capacitance C_t
 High breakdown voltage: V_R = 80 V
 Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage
V_R
80
V
Maximum peak reverse voltage
V_RM
80
V
Forward current
I_F
100
mA
Peak forward current
I_FM
225
mA
Non-repetitive peak forward surge current ^* I_FSM
500
mA
Junction temperature
T_j
125
°C
Storage temperature
T_stg –55 to +125 °C
Note) * : t = 1 s
Unit: mm
0.01±0.005
2
1
1.00±0.05
0.39⁺_−^00..0013
0.25±0.05
0.25±0.05
2
1
0.65±0.01
0.05±0.03
1: Anode
2: Cathode
Marking Symbol: 1
ML-2-N1 Package
 Electrical Characteristics T_a = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Forward voltage
Reverse voltage
Reverse current
Terminal capacitance
V_F
I_F = 100 mA
V_R
I_R = 100 µA
I_R
V_R = 75 V
C_t
V_R = 0, f = 1 MHz
0.95 1.2
V
80
V
100
nA
0.6
2
pF
Reverse recovery time ^*
t_rr
I_F = 10 mA, V_R = 6 V, I_rr = 0.1 I_R ,
R_L = 100 Ω
3
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz
3. . *: t_rr measurement circuit
Bias Application Unit (N-50BU)
Input Pulse
Output Pulse
t_r
t_p
10%
t
I_F
t_rr
t
A
Pulse Generator
(PG-10N)
R_s = 50 Ω
Wave Form Analyzer
(SAS-8130)
R_i = 50 Ω
V_R
90%
t_p = 2 µs
t_r = 0.35 ns
δ = 0.05
I_rr = 0.1 I_R
I_F = 10 mA
V_R = 6 V
R_L = 100 Ω
Publication date: May 2005
SKF00068AED
1