MA26077 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon epitaxial planar type

Band Switching Diodes
MA26077
Silicon epitaxial planar type
For band switching
 Features
 Low forward dynamic resistance r_f
 Less voltage dependence of diode capacitance C_D
 Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage
Forward current
Operating ambient temperature
Storage temperature
V_R
35
V
I_F
100
mA
T_opr
–25 ∼ +85
°C
T_stg –55 to +125 °C
Unit: mm
3
2
1
1.00±0.05
0.39⁺_−^00..0013
0.25±0.05
0.25±0.05
1
3
2
0.65±0.01
0.05±0.03
1: Anode
2: N.C.
3: Cathode
ML3-N2 Package
Marking Symbol: 3L
 Electrical Characteristics T_a = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Forward voltage
V_F
I_F = 100 mA
0.92 1.0
V
Reverse current
I_R
V_R = 33 V
0.01 100
nA
Diode capacitance
C_D
V_R = 6 V, f = 1 MHz
0.9 1.2
pF
Forward dynamic resistance ^*
r_f
I_F = 2 mV, f = 100 MHz
0.65 0.85
Ω
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Maximum ambient temperature during operation.
3. Absolute frequency of input and output is 100 MHz
4. *: Measuring instrument: YHP 4191A RF IMPEDANCE ANALYZER
Publication date: November 2004
SKG00017AED
1