MA22D23 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon epitaxial planar type For high frequency rectification

Schottky Barrier Diodes (SBD)
MA22D23
Silicon epitaxial planar type
For high frequency rectification
1.6±0.1
0.80±0.05
Unit: mm
■ Features
• I_F(AV) = 1 A rectification is possible.
• High I_FSM (I_FSM = 30 A)
• Small reverse current I_R.
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage
V_R
25
V
Repetitive peak reverse voltage V_RRM
25
V
Forward current (Average) ^*1
I_F(AV)
1.0
A
Non-repetitive peak forward
I_FSM
30
A
surge current ^*2
Junction temperature
T_j
150
°C
Storage temperature
T_stg
−55 to +125
°C
Note) _*1: Mounted on a alumina PC board
*2: ^{The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)}
1
0 to 0.1
2
0.55±0.1
5˚
0.45±0.1
0.16^{+–00..016}
Marking Symbol: 3W
1: Anode
2: Cathode
Mini2-F1 Package
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current
Forward voltage
Terminal capacitance
I_R1
V_R = 15 V
I_R2
V_R = 20 V
V_F1
I_F = 0.5 A
V_F2
I_F = 1.0 A
C_t
V_R = 10 V, f = 1 MHz
1.5 20
µA
2.5 40
0.41 0.46
V
0.44 0.53
45
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
Pulse Generator
(PG-10N)
R_s = 50 Ω
Bias Application Unit (N-50BU)
A
Wave Form
Analyzer
(SAS-8130)
R_i = 50 Ω
V_R
Input Pulse
t_r
t_p
t
10%
90%
t_p = 2 µs
t_r = 0.35 ns
δ = 0.05
Output Pulse
I_F
t_rr
t
I_rr = 10 mA
I_F = 100 mA
I_R = 100 mA
R_L = 100 Ω
Publication date: October 2003
SKH00127AED
1