MA21D38 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon epitaxial planar type

Schottky Barrier Diodes (SBD)
MA21D38
Silicon epitaxial planar type
For high frequency rectification
■ Features
 I_F(AV) = 1 A rectification is possible
 Low forward voltag V_F
 High non-repetitive peak forward surge voltage　
1.25±0.10
0.60±0.10
1
Unit: mm
0.58^{+–00..0032}
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage
V_R
30
V
Maximum peak reverse voltage
V_RM
30
V
Forward current (Average)
I_F(AV)
1.0
A
Non-repetitive peak forward surge
current ^*
I_FSM
20
A
Junction temperature
T_j
125
°C
Storage time
T_stg –55 to +125
°C
Note) *: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
2
0.80±0.10
5°
0.16^{+–00..016}
1: Anode
2: Cathode
Marking Symbol: 3U
SMini2-F2 Package
■ Electrical Characteristics T_a = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Forward voltage
V_F1 I_F = 0.5 A
0.34 0.38
V
V_F2 I_F = 0.7 A
0.36 0.40
V_F3 I_F = 1.0 A
0.38 0.42
Reverse current
I_R V_R = 30 V
100
µA
Terminal capacitance
C_t V_R = 10 V, f = 1 MHz
40
pF
Reverse recovery time ^*
t_rr
I_F = I_R = 100 mA, I_rr = 10 mA,
R_L = 100 Ω
13
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. *: t_rr measurement circuit
Bias Application Unit (N-50BU)
Input Pulse
Output Pulse
t_r
t_p
10%
t
I_F
t_rr
t
A
Pulse Generator
(PG-10N)
R_s = 50 Ω
Wave Form Analyzer
(SAS-8130)
R_i = 50 Ω
V_R
90%
t_p = 2 µs
t_r = 0.35 ns
δ = 0.05
I_rr = 10 mA
I_F = I_R = 100 mA
R_L = 100 Ω
Publication date: November 2004
SKH00138BED
1