MA198 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon epitaxial planar type

Switching Diodes
MA3X198 (MA198)
Silicon epitaxial planar type
For wave detection
■ Features
• Two elements contained in one package, allowing high-density
mounting
• Soft recovery characteristic (t_rr = 100 ns)
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
0.40^{+–00..0150}
3
1
2
(0.95) (0.95)
1.9±0.1
2.90^{+–00..0250}
10˚
Unit: mm
0.16^{+–00..0160}
Reverse voltage
V_R
40
V
Repetitive peak reverse voltage V_RRM
40
V
Forward current ^Single
I_F(AV)
100
mA
(Average)
Series
75
Repetitive peak Single
I_FRM
225
mA
forward current
Series
170
EIAJ: SC-59
1: Anode 1
2: Cathode 2
3: Cathode 1
Anode 2
Mini3-G1 Package
Marking Symbol: M2F
Non-repetitive peak ^Single
forward surge current^* _Series
Junction temperature
Storage temperature
Note) _*: t = 1 s
I_FSM
500
mA
325
T_j
150
°C
T_stg
−55 to +150
°C
Internal Connection
3
■ Electrical Characteristics T_a = 25°C ± 3°C
1
2
Parameter
Symbol
Conditions
Min Typ Max Unit
Forward voltage
Reverse current
Terminal capacitance
V_F1
I_F = 100 µA
V_F2
I_R = 100 mA
I_R
V_R = 40 V
C_t
V_R = 6 V, f = 1 MHz
0.65
0.72
V
1.2
V
10
nA
1.0 2.0
pF
Reverse recovery time^*
t_rr
I_F = 10 mA, V_R = 6 V
I_rr = 0.1 I_R, R_L = 100 Ω
100
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 10 MHz.
3. *: t_rr measurement circuit
Bias Application Unit (N-50BU)
Input Pulse
Output Pulse
t_r
t_p
10%
t
I_F
t_rr
t
A
Pulse Generator
(PG-10N)
R_s = 50 Ω
Wave Form Analyzer
(SAS-8130)
V_R
90%
t_p = 2 µs
t_r = 0.35 ns
δ = 0.05
I_rr = 0.1 I_R
I_F = 10 mA
V_R = 6 V
R_L = 100 Ω
R_i = 50 Ω
Note) The part number in the parenthesis shows conventional part number.
Publication date: February 2005
SKF00041DED
1