MA142WA Datasheet, PDF (1/4 Pages) Panasonic Semiconductor – Silicon epitaxial planar type

Switching Diodes
MA3J142D (MA142WA), MA3J142E (MA142WK)
Silicon epitaxial planar type
For switching circuits
0.3^+–00.1
3
Unit: mm
0.15^{+–00..015}
■ Features
• Two isolated elements contained in one package, allowing high-
density mounting
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage
V_R
80
V
Maximum peak reverse voltage
V_RM
80
V
Forward current
Single
I_F
100
mA
Double
150
Peak forward
Single
I_FM
225
mA
current
Double
340
Non-repetitive peak ^Single
I_FSM
500
mA
forward surge current ^* Double
750
Junction temperature
Storage temperature
T_j
150
°C
T_stg
−55 to +150
°C
Note) _*: t = 1 s
12
(0.65) (0.65)
1.3±0.1
2.0±0.2
5˚
0.9±0.1
EIAJ: SC-79
SMini3-F1 Package
MA3J142D MA3J142E
1 Cathode 1 Anode 1
2 Cathode 2 Anode 2
3 Anode Cathode
Marking Symbol:
• MA3J142D: MO • MA3J142E: MU
Internal Connection
3
3
■ Electrical Characteristics T_a = 25°C ± 3°C
1 _D2
1_E2
Parameter
Symbol
Conditions
Min Typ Max Unit
Forward voltage
V_F
Reverse voltage
V_R
Reverse current
I_R
Terminal capacitance MA3J142D
C_t
MA3J142E
I_F = 100 mA
I_R = 100 µA
V_R = 75 V
V_R = 0 V, f = 1 MHz
1.2
V
80
V
100 nA
15
pF
2
Reverse recovery time ^* MA3J142D
t_rr
MA3J142E
I_F = 10 mA, V_R = 6 V
I_rr = 0.1 I_R , R_L = 100 Ω
10
ns
3
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3. *: t_rr measurement circuit
Bias Application Unit (N-50BU)
Input Pulse
Output Pulse
t_r
t_p
10%
t
I_F
t_rr
t
A
Pulse Generator
(PG-10N)
R_s = 50 Ω
Wave Form Analyzer
(SAS-8130)
V_R
90%
t_p = 2 µs
t_r = 0.35 ns
δ = 0.05
I_rr = 0.1 I_R
I_F = 10 mA
V_R = 6 V
R_L = 100 Ω
R_i = 50 Ω
Note) The part numbers in the parenthesis show conventional part number.
Publication date: March 2004
SKF00018BED
1