MA125 Datasheet, PDF (1/4 Pages) Panasonic Semiconductor – Silicon epitaxial planar type

Switching Diodes
MA6X125 (MA125)
Silicon epitaxial planar type
For switching circuits
I Features
• Four-element contained in one package, allowing high-density
mounting
0.65 ± 0.15
6
5
4
2.8
+
−
0.2
0.3
1.5
+ 0.25
− 0.05
Unit : mm
0.65 ± 0.15
1
2
3
I Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
Peak reverse voltage
Forward current (DC)^*
Peak forward current^*
Junction temperature
Storage temperature
V_R
40
V
V_RM
40
V
I_F
100
mA
I_FM
200
mA
T_j
150
°C
T_stg
−55 to +150
°C
Note) *1 : Value for single diode
0.1 to 0.3
0.4 ± 0.2
1 : Cathode 1
2 : Anode 2
3 : Cathode 3
Anode 4
4 : Anode 3
5 : Cathode 4
6 : Anode 1
Cathode 2
Mini Type Package (6-pin)
Marking Symbol: M2I
Internal Connection
6
1
5
2
4
3
I Electrical Characteristics T_a = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Reverse voltage (DC)
Terminal capacitance
Reverse recovery time^*3
I_R
V_F
V_R
C_t
t_rr1*1
t_rr2*2
V_R = 40 V
I_F = 100 mA
I_R = 100 µA
V_R = 0 V, f = 1 MHz
I_F = 10 mA, V_R = 6 V
I_rr = 0.1 · I_R, R_L = 100 Ω
100 nA
1.2
V
40
V
5
pF
150
ns
90
Note) 1. Rated input/output frequency: 100 MHz
2. *1 : Between pins 1 and 6, Between pins 3 and 5
*2 : Between pins 2 and 6, Between pins 3 and 4
*3 : t_rr measuring circuit
Bias Application Unit N-50BU
Input Pulse
Output Pulse
t_r
t_p
10%
t
I_F
t_rr
t
A
Pulse Generator
(PG-10N)
R_s = 50 Ω
W.F.Analyzer
(SAS-8130)
R_i = 50 Ω
Note)
V_R
90%
t_p = 2 µs
t_r = 0.35 ns
δ = 0.05
I_rr = 0.1 · I_R
I_F = 10 mA
V_R = 6 V
R_L = 100 Ω
The part number in the parenthesis shows conventional part number.
113