MA123 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon epitaxial planar type

Switching Diodes
MA6X123 (MA123)
Silicon epitaxial planar type
For switching circuit
I Features
• Four-element contained in one package, allowing high-density
mounting
• Centrosymmetrical wiring, allowing to free from the taping direc-
tion
• Short reverse recovery time t_rr
• Small terminal capacitance, C_t
I Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
V_R
80
V
Peak reverse voltage
V_RM
80
V
Average forward current^*1
I_F
100
mA
Peak forward current^*1
I_FM
225
mA
Non-repetitive peak forward
I_FSM
500
mA
surge current^*1,2
Junction temperature
T_j
150
°C
Storage temperature
T_stg
−55 to +150
°C
Note) *1 : Value for single diode
*2 : t = 1 s
2.90^{+–00..0250}
1.9±0.1
(0.95) (0.95)
4
5
6
32
1
0.30^{+–00..0150}
10°
Unit : mm
0.16^{+–00..0160}
1 : Anode 1
2 : Anode 2
3 : Cathode 3,4
4 : Anode 3
5 : Anode 2
6 : Cathode 1,2
Mini6-G2 Package
Marking Symbol: M2B
Internal Connection
6
1
5
2
4
3
I Electrical Characteristics T_a = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Reverse voltage (DC)
Terminal capacitance
Reverse recovery time^*
I_R
V_R = 75 V
V_F
I_F = 100 mA
V_R
I_R = 100 µA
C_t
V_R = 0 V, f = 1 MHz
t_rr
I_F = 10 mA, V_R = 6 V
I_rr = 0.1 · I_R, R_L = 100 Ω
100 nA
1.2
V
80
V
2
pF
3
ns
Note) 1. Rated input/output frequency: 100 MHz
2. * : t_rr measuring circuit
Bias Application Unit N-50BU
Input Pulse
Output Pulse
A
Pulse Generator
(PG-10N)
R_s = 50 Ω
W.F.Analyzer
(SAS-8130)
R_i = 50 Ω
t_r
t_p
t
10%
V_R
90%
t_p = 2 µs
t_r = 0.35 ns
δ = 0.05
I_F
t_rr
t
I_rr = 0.1 · I_R
I_F = 10 mA
V_R = 6 V
R_L = 100 Ω
Note) The part number in the parenthesis shows conventional part number.
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