MA10704 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Schottky Barrier Diodes (SBD)

Schottky Barrier Diodes (SBD)
MA2J704 (MA10704)
Silicon epitaxial planar type
For super high speed switching
1.25±0.1
0.35±0.1
Unit: mm
0.7±0.1
■ Features
• Forward current (Average) I_F(AV) = 200 mA rectification is possible
• Small reverse current I_R (About 1/10 of I_R of the ordinary
products)
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage
V_R
20
V
Repetitive peak reverse voltage
V_RRM
20
V
Peak forward current
I_FM
300
mA
Forward current (Average)
I_F(AV)
200
mA
Non-repetitive peak forward
I_FSM
1
A
surge current ^*
Junction temperature
Storage temperature
T_j
125
°C
T_stg
−55 to +125
°C
Note) *: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
1
0 to 0.1
2
0.5±0.1
5˚
0.16^{+–00..016}
1 : Anode
2 : Cathode
EIAJ : SC-76
SMini2-F1 Package
Marking Symbol: 2S
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Forward voltage
V_F
I_F = 200 mA
0.55
V
Reverse current
I_R1
V_R = 10 V
2
µA
I_R2
V_R = 20 V
5
Terminal capacitance
Reverse recovery time ^*
C_t
V_R = 0 V, f = 1 MHz
t_rr
I_F = I_R = 100 mA
I_rr = 0.1 I_R , R_L = 100 Ω
30
pF
3.0
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 1 GHz.
4. _*: t_rr measurement circuit
Bias Application Unit (N-50BU)
Input Pulse
Output Pulse
t_r
t_p
10%
t
I_F
t_rr
t
A
Pulse Generator
(PG-10N)
R_s = 50 Ω
Wave Form Analyzer
(SAS-8130)
R_i = 50 Ω
V_R
90%
t_p = 2 µs
t_r = 0.35 ns
δ = 0.05
I_rr = 0.1 I_R
I_F = 100 mA
I_R = 100 mA
R_L = 100 Ω
Note) The part number in the parenthesis shows conventional part number.
Publication date: April 2004
SKH00013BED
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