MA10702 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon epitaxial planar type

Schottky Barrier Diodes (SBD)
MA3J702 (MA10702)
Silicon epitaxial planar type
For high frequency rectification
I Features
• I_F(AV) = 500 mA rectification is possible
• Small reverse current I_R. (About 1/10 of I_R of the ordinary
products)
• S-Mini type 3-pin package
I Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage (DC)
V_R
20
V
Repetitive peak reverse-voltage
V_RRM
20
V
Average forward current
I_F(AV)
500
mA
Non-repetitive peak forward-
I_FSM
3
A
surge-current ^*
Junction temperature
Storage temperature
T_j
125
°C
T_stg
−55 to +125
°C
Note) *: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
0.3^+–00.1
3
12
(0.65) (0.65)
1.3±0.1
2.0±0.2
5°
Unit: mm
0.15^{+–00..015}
0.9±0.1
1 : Anode
2 : N.C.
3 : Cathode
SMini3-F1 Package
Marking Symbol: M4R
Internal Connection
3
I Electrical Characteristics T_a = 25°C
1
2
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time ^*
I_R1
V_R = 5 V
I_R2
V_R = 10 V
V_F1
I_F = 10 mA
V_F2
I_F = 500 mA
C_t
V_R = 0 V, f = 1 MHz
t_rr
I_F = I_R = 100 mA
I_rr = 10 mA, R_L = 100 Ω
1
µA
10
0.3 0.4
V
0.5 0.55
60
pF
5
ns
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
ɹ 2. Rated input/output frequency: 400 MHz 3. *: t_rr measuring instrument
Bias Application Unit N-50BU
Input Pulse
Output Pulse
t_r
t_p
10%
t
I_F
t_rr
t
A
Pulse Generator
(PG-10N)
R_s = 50 Ω
Wave Form Analyzer
(SAS-8130)
R_i = 50 Ω
V_R
90%
t_p = 2 µs
t_r = 0.35 ns
δ = 0.05
I_rr = 10 mA
I_F = 100 mA
I_R = 100 mA
R_L = 100 Ω
Note) The part number in the parenthesis shows conventional part number.
Publication date: August 2001
SKH00053AED
1