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LNJ947W8CRA Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Hight Bright Surface Mounting Chip LED
This product complies with the RoHS Directive (EU 2002/95/EC).
LNJ947W8CRA
Hight Bright Surface Mounting Chip LED
1005 Type
 Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Power dissipation
PD
40
mW
Forward current
IF
10
mA
Pulse forward current *
IFP
40
mA
Reverse voltage
VR
5
V
Operating ambient temperature
Topr
–30 to +85
°C
Storage temperature
Tstg –40 to +100 °C
Note) *: The condition of IFP is duty 10%, Pulse width 1 msec.
 Electro-Optical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Luminous intensity *1
IO IF = 5 mA
Reverse current
IR VR = 5 V
Forward voltage
VF IF = 5 mA
Peak emission wavelength
Dominant emission wavelength *2
λP IF = 5 mA
λd IF = 5 mA
Spectral half band width
Δλ IF = 5 mA
Note) *1: Measurement tolerance: ±20%
*2: Measurement tolerance: ±2 nm
Conditions
IO  IF
1 000
IF  VF
100
 Lighting Color
 Blue
Min Typ Max Unit
8.5 18.0 55.0 mcd
10
µA
2.90 3.20
V
465
nm
467 472 478
nm
20
nm
Relative luminous intensity  Ta
1 000
100
10
100
10
1
1
10
100
Forward current IF (mA)
Relative luminous intensity  λP
1
1.0
2.0
3.0
4.0
5.0
Forward voltage VF (V)
100
Y
Directive characteristics
80
X
−20° −10° 0° 10° 20°
X
−30°
30°
60
Y −40°
80°
40°
−50°
50°
40
60°
−60°
60°
−70°
40°
70°
20
−80°
20°
80°
0
−90°
90°
400
450
500
550
600 100 80 60 40 20 0 20 40 60 80 100
Peak emission wavelength λP (nm)
Relative luminous intensity (%)
10
−30
0
30
60
90
Ambient temperature Ta (°C)
IF  Ta
12
8
4
0
−30
0
30
60
90
Ambient temperature Ta (°C)
Publication date: October 2010
Ver. AEK
1