LNJ8L4C28RAA Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Hight Bright Surface Mounting Chip LED

This product complies with the RoHS Directive (EU 2002/95/EC).
LNJ8L4C28RAA
Hight Bright Surface Mounting Chip LED
3528 (PLCC4) Type
 Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Power dissipation
Forward current
Pulse forward current ^*
Reverse voltage
Junction temperature
Thermal resistance
Operating ambient temperature
Storage temperature
P_D
190
I_F
70
I_FP
100
V_R
5
T_j
125
R_th
130
T_opr –40 to +105
T_stg –40 to +125
Note) *: The condition of I_FP is duty 10%, Pulse width 1 msec.
Unit
mW
mA
mA
V
°C
°C/W
°C
°C
 Electro-Optical Characteristics T_a = 25°C±3°C
Parameter
Symbol
Conditions
Luminous intensity ^*1
Reverse current
Forward voltage ^*2
Luminous flux ^*1
Peak emission wavelength
Dominant emission wavelength ^*3
Spectral half band width
I_O I_F = 50 mA
I_R V_R = 5 V
V_F I_F = 50 mA
F I_F = 50 mA
λ_P I_F = 50 mA
λ_d I_F = 50 mA
Δλ I_F = 50 mA
Note) *1: Measurement tolerance: ±11%
*2: Measurement tolerance: ±0.15 V
*3: Measurement tolerance: ±2 nm
I_O  I_F
10⁴
I_F  V_F
10²
 Lighting Color
 Red
Min Typ Max Unit
1450 1810 2260 mcd
10
µA
2.05 2.30 2.65
V
(5.40) (6.72) (8.40) lm
623
nm
612 617 624
nm
20
nm
Relative luminous intensity  T_a
10³
10³
10
10²
10²
10
1
10
10²
Forward current I_F (mA)
1
1.0
1.5
2.0
2.5
3.0
4.0
Forward voltage V_F (V)
10
−40 −20 0 20 40 60 80 100
Ambient temperature T_a (°C)
Relative luminous intensity  λ_P
100
Directive characteristics
80
20° ^{10° 0° 10°} 20°
30°
30°
60
40°
80°
40°
50°
50°
40
60°
60°
60°
70°
40°
70°
20
80°
20°
80°
0
90°
90°
550
600
650
700
100 80 60 40 20 0 20 40 60 80 100
Peak emission wavelength λ_P (nm)
Relative luminous intensity (%)
I_F  T_a
80
60
40
20
0
0 20 40 60 80 100 120
Ambient temperature T_a (°C)
Publication date: August 2011
Ver. AEK
1