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| LNJ826W86RA Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Surface Mounting Chip LED | |||
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Light Emitting Diodes
This product complies with the RoHS Directive (EU 2002/95/EC).
LNJ826W86RA
Surface Mounting Chip LED
UTSS Type
ï¢ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Power dissipation
Forward current
Pulse forward current *
Reverse voltage
Operating ambient temperature
Storage temperature
PD
55
mW
IF
20
mA
IFP
60
mA
VR
4
V
Topr
â30 to +85
°C
Tstg â40 to +100 °C
Note) *: The conditon of IFP is duty 10%, pulse width 10 ms.
ï¢ Electro-Optical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Luminous intensity
IO IF = 10 mA
Reverse current
IR VR = 4 V
Forward voltage
VF IF = 10 mA
Peak emission wavelength
λP IF = 10 mA
Dominant emission wavelength
λd IF = 10 mA
Spectral half band width
Îλ IF = 10 mA
Note) Be careful of the product destruction by static electricity.
IO  IF
100
IF  VF
100
50
50
30
ï¢ Lighting Color
ï Soft Orange
Min Typ Max Unit
13.5 16.9
mcd
100
µA
1.92 2.50
V
610
nm
600 605 610
nm
15
nm
Relative luminous intensity  Ta
1 000
500
300
10
10
100
5
5
50
3
30
1
1
3 5 10
30 50 100
Forward current IF (mA)
1
1.6
1.8
2.0
2.2
2.4
Forward voltage VF (V)
10
â20 0
20 40 60
80 100
Ambient temperature Ta (°C)
Relative luminous intensity  λP
IF  Ta
25
100
Directive characteristics
80
20° 10° 0° 10° 20°
30°
30°
40°
80°
40°
60
50°
50°
60°
40
60°
60°
70°
40°
70°
20
80°
20°
80°
0
90°
90°
550
600
650
700
100 80 60 40 20 0 20 40 60 80 100
Peak emission wavelength λP (nm)
Relative luminous intensity (%)
20
15
10
5
00
20
40
60
80
100
Ambient temperature Ta (°C)
Publication date: December 2008
SHD00604CEK
1
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