LNJ626W8CRA Datasheet, PDF (1/4 Pages) Panasonic Semiconductor – LNJ626W8CRA Surface Mounting Chip LED

Light Emitting Diodes
This product complies with the RoHS Directive (EU 2002/95/EC).
LNJ626W8CRA
Surface Mounting Chip LED
UTSS Type
 Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Power dissipation
P_D
70
mW
Forward current
I_F
20
mA
Pulse forward current ^*
I_FP
70
mA
Reverse voltage
V_R
5
V
Operating ambient temperature
T_opr
–30 to +85
°C
Storage temperature
T_stg –40 to +100 °C
Note) *: The condition of I_FP is duty 10%, Pulse width 1 msec.
 Electro-Optical Characteristics T_a = 25°C±3°C
Parameter
Symbol
Conditions
Luminous intensity ^*1
I_O I_F = 5 mA
Reverse current
I_R V_R = 5 V
Forward voltage
V_F I_F = 5 mA
Peak emission wavelength
Dominant emission wavelength ^*2
λ_P I_F = 5 mA
λ_d I_F = 5 mA
Spectral half band width
Δλ I_F = 5 mA
Note) *1: Measurement tolerance: ±20%
*2: Measurement tolerance: ±3 nm
I_O  I_F
1 000
I_F  V_F
100
500
300
50
30
100
50
30
10
 Lighting Color
 Pure Green
Min Typ Max Unit
15.0 40.0 119.0 mcd
100
µA
2.65 2.90 3.25
V
520
nm
518 527 538
nm
30
nm
Relative luminous intensity  T_a
1 000
500
300
100
10
5
50
5
3
30
3
1
1
3 5 10
30 50 100
Forward current I_F (mA)
1
1.0
2.0
3.0
4.0
5.0
Forward voltage V_F (V)
10
−20 0
20 40 60
80 100
Ambient temperature T_a (°C)
Relative luminous intensity  λ_P
100
Y
Directive characteristics
80
X
−20° ^{−10° 0° 10°} 20°
−30°
30°
60
X ^−40°
80°
40°
Y_−50°
50°
40
60°
−60°
60°
−70°
40°
70°
20
−80°
20°
80°
0
450
500
550
600
−90°
90°
100 80 60 40 20 0 20 40 60 80 100
Peak emission wavelength λ_P (nm)
Relative luminous intensity (%)
I_F  T_a
30
20
10
0
0
20
40
60
80
100
Ambient temperature T_a (°C)
Publication date: December 2008
SHD00659CEK
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