LNJ624C4CRA Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Hight Bright Surface Mounting Chip LED

This product complies with the RoHS Directive (EU 2002/95/EC).
LNJ624C4CRA
Hight Bright Surface Mounting Chip LED
3528 (PLCC2) Type
 Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Power dissipation
P_D
80
mW
Forward current
I_F
20
mA
Pulse forward current ^*
I_FP
70
mA
Reverse voltage
V_R
5
V
Operating ambient temperature
T_opr –40 to +100 °C
Storage temperature
T_stg –40 to +100 °C
Note) *: The condition of I_FP is duty 10%, Pulse width 1 msec.
 Electro-Optical Characteristics T_a = 25°C±3°C
Parameter
Symbol
Conditions
Luminous intensity ^*1
Reverse current
Forward voltage
Peak emission wavelength
Dominant emission wavelength ^*2
Spectral half band width
Note) *1: Measurement tolerance: ±15%
*2: Measurement tolerance: ±2 nm
I_O I_F = 10 mA
I_R V_R = 5 V
V_F I_F = 10 mA
λ_P I_F = 10 mA
λ_d I_F = 10 mA
Δλ I_F = 10 mA
I_O  I_F
10³
I_F  V_F
10²
 Lighting Color
 Pure Green
Min Typ Max Unit
140 290 380 mcd
100
µA
3.2 3.9
V
520
nm
523 530 540
nm
30
nm
Relative luminous intensity  T_a
10³
10²
10
10²
10
1
1
10
10²
Forward current I_F (mA)
1
2.0
2.5
3.0
3.5
4.0
Forward voltage V_F (V)
10
−40 −20 0 20 40 60 80 100
Ambient temperature T_a (°C)
Relative luminous intensity  λ_P
100
Directive characteristics
80
20° ^{10° 0° 10°} 20°
30°
30°
60
40°
80°
40°
50°
50°
40
60°
60°
60°
70°
40°
70°
20
80°
20°
80°
0
90°
90°
400
450 500
550 600
650 100 80 60 40 20 0 20 40 60 80 100
Peak emission wavelength λ_P (nm)
Relative luminous intensity (%)
I_F  T_a
40
30
20
10
0
0 20 40 60 80 100 120
Ambient temperature T_a (°C)
Publication date: August 2011
Ver. AEK
1