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| LNJ252W82RA Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Hight Bright Surface Mounting Chip LED | |||
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Light Emitting Diodes
This product complies with the RoHS Directive (EU 2002/95/EC).
LNJ252W82RA
Hight Bright Surface Mounting Chip LED
SV (Side View) -0.4 Type
ï¢ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Power dissipation
PD
55
mW
Forward current
IF
20
mA
Pulse forward current *
IFP
60
mA
Reverse voltage
VR
4
V
Operating ambient temperature
Topr
â30 to +85
°C
Storage temperature
Tstg â40 to +100 °C
Note) *: The condition of IFP is duty 10%, Pulse width 1 msec.
ï¢ Electro-Optical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Luminous intensity *1
IO IF = 10 mA
Reverse current
IR VR = 4 V
Forward voltage
VF IF = 10 mA
Peak emission wavelength
Dominant emission wavelength *2
λP IF = 10 mA
λd IF = 10 mA
Spectral half band width
Îλ IF = 10 mA
Note) *1: Measurement tolerance: ±20%
*2: Measurement tolerance: ±3 nm
IO  IF
100
IF  VF
100
50
50
30
30
ï¢ Lighting Color
ï Red
Min Typ Max Unit
10.0 25.0 40.0 mcd
100
µA
1.85 2.5
V
645
nm
620 630 640
nm
22
nm
Relative luminous intensity  Ta
10
5
3
10
10
1
5
5
0.5
3
3
0.3
1
1
3 5 10
30 50 100
Forward current IF (mA)
1
1.6
1.8
2.0
2.2
Forward voltage VF (V)
0.1
â20 0
20 40 60 80 100
Ambient temperature Ta (°C)
Relative luminous intensity  λP
100
Directive characteristics
80
20° 10° 0° 10° 20°
30°
30°
60
40°
80°
40°
50°
50°
40
60°
60°
60°
70°
40°
70°
20
80°
20°
80°
0
90°
90°
550
600
650
700
750 100 80 60 40 20 0 20 40 60 80 100
Peak emission wavelength λP (nm)
Relative luminous intensity (%)
IF  Ta
25
20
15
10
5
0
0
20
40
60
80
100
Ambient temperature Ta (°C)
Publication date: January 2009
SHD00700CEK
1
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